Semiconductor device structure and method for forming the same

ABSTRACT

A semiconductor device structure is provided. The semiconductor device structure includes first nanostructures and second nanostructures stacked in a vertical direction over a substrate, and a first dummy fin structure between the first nanostructures and the second nanostructures. The semiconductor device structure includes a first gate structure formed over the first nanostructures, wherein the first gate structure includes a gate dielectric layer, and the gate dielectric layer is in direct contact with a sidewall surface of the first dummy fin structure.

PRIORITY CLAIM AND CROSS-REFERENCE

The present application is Continuation application of U.S. patent application Ser. No. 17/559,826, filed on Dec. 22, 2021, which is Continuation application of U.S. patent application Ser. No. 16/910,574 filed on Jun. 24, 2020, which a Continuation-In-Part application of U.S. Ser. No. 16/260,483, filed Jan. 29, 2019, the entirety of which are incorporated by reference herein.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductive layers of material over a semiconductor substrate, and patterning the various material layers using lithography to form circuit components and elements thereon. Many integrated circuits are typically manufactured on a single semiconductor wafer, and individual dies on the wafer are singulated by sawing between the integrated circuits along a scribe line. The individual dies are typically packaged separately, in multi-chip modules, for example, or in other types of packaging.

As the semiconductor industry has progressed into nanometer technology process nodes in pursuit of higher device density, higher performance, and lower costs, challenges from both fabrication and design issues have resulted in the development of three-dimensional designs.

Although existing semiconductor devices have generally been adequate for their intended purposes, they have not been entirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIGS. 1A-1K show perspective representations of various stages of forming a semiconductor device structure, in accordance with some embodiments of the disclosure.

FIGS. 2A-2E show cross-sectional representations of various stages of forming the semiconductor device structure after FIG. 1K, in accordance with some embodiments of the disclosure.

FIG. 2E′ shows a cross-sectional representation of the semiconductor device structure, in accordance with some embodiments of the disclosure.

FIG. 3 shows a cross-sectional representation of the semiconductor device structure along line BB′ shown in FIG. 1K, in accordance with some embodiments of the disclosure.

FIG. 4 shows a top-view representation of the semiconductor device structure, in accordance with some embodiments of the disclosure.

FIG. 5A shows a perspective representation of a semiconductor device structure, in accordance with some embodiments of the disclosure.

FIG. 5B shows a cross-sectional representation of the semiconductor device structure along line BB′ shown in FIG. 5A, in accordance with some embodiments of the disclosure.

FIG. 5C shows a cross-sectional representation of the semiconductor device structure along line CC′ shown in FIG. 5A, in accordance with some embodiments of the disclosure.

FIG. 5D shows a cross-sectional representation of the semiconductor device structure along line DD′ shown in FIG. 5A, in accordance with some embodiments of the disclosure.

FIGS. 6A-6G show perspective representations of various stages of forming of a semiconductor device structure, in accordance with some embodiments of the disclosure.

FIGS. 7A-7I show perspective representations of various stages of forming a semiconductor device structure, in accordance with some embodiments of the disclosure.

FIGS. 8A-8E show cross-sectional representations of various stages of forming the semiconductor device structure after FIG. 7I, in accordance with some embodiments of the disclosure.

FIGS. 9A-9E show cross-sectional representations of various stages of forming the semiconductor device structure after FIG. 6G, in accordance with some embodiments of the disclosure.

FIG. 9E′ shows a cross-sectional representation of the semiconductor device structure, in accordance with some embodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the subject matter provided. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Some variations of the embodiments are described. Throughout the various views and illustrative embodiments, like reference numbers are used to designate like elements. It should be understood that additional operations can be provided before, during, and after the method, and some of the operations described can be replaced or eliminated for other embodiments of the method.

The gate all around (GAA) transistor structures described below may be patterned by any suitable method. For example, the structures may be patterned using one or more photolithography processes, including double-patterning or multi-patterning processes. Generally, double-patterning or multi-patterning processes combine photolithography and self-aligned processes, allowing patterns to be created that have, for example, pitches smaller than what is otherwise obtainable using a single, direct photolithography process. For example, in one embodiment, a sacrificial layer is formed over a substrate and patterned using a photolithography process. Spacers are formed alongside the patterned sacrificial layer using a self-aligned process. The sacrificial layer is then removed, and the remaining spacers may then be used to pattern the GAA structure.

Embodiments for forming a semiconductor device structure are provided. FIGS. 1A-1K show perspective representations of various stages of forming a semiconductor device structure 100 a, in accordance with some embodiments of the disclosure. The semiconductor device structure 100 a is a gate all around (GAA) transistor structure. A self-aligned cut metal gate process is provided. A dummy fin structure is formed over an isolation structure, and a capping layer is formed over the dummy fin structure. The dummy fin structure and the capping layer construct a barrier structure to separate two gate structures.

Referring to FIG. 1A, a substrate 102 is provided. The substrate 102 may be made of silicon or other semiconductor materials. Alternatively or additionally, the substrate 102 may include other elementary semiconductor materials such as germanium. In some embodiments, the substrate 102 is made of a compound semiconductor such as silicon carbide, gallium arsenic, indium arsenide, or indium phosphide. In some embodiments, the substrate 102 is made of an alloy semiconductor such as silicon germanium, silicon germanium carbide, gallium arsenic phosphide, or gallium indium phosphide. In some embodiments, the substrate 102 includes an epitaxial layer. For example, the substrate 102 has an epitaxial layer overlying a bulk semiconductor.

A number of first semiconductor layers 104 and a number of second semiconductor layers 106 are sequentially alternately formed over the substrate 102. The semiconductor layers 104 and 106 are vertically stacked to form a stacked wire structure.

In some embodiments, the first semiconductor layers 104 and the second semiconductor layers 106 independently include silicon (Si), germanium (Ge), silicon germanium (Si_(1-x)Gex, 0.1<x<0.7, the value x is the atomic percentage of germanium (Ge) in the silicon germanium), indium arsenide (InAs), indium gallium arsenide (InGaAs), indium antimonide (InSb), or another applicable material. In some embodiments, the first semiconductor layer 104 and the second semiconductor layer 106 are made of different materials.

The first semiconductor layers 104 and the second semiconductor layers 106 are made of different materials having different lattice constant. In some embodiments, the first semiconductor layer 104 is made of silicon germanium (Si_(1-x)Gex, 0.1<x<0.7), and the second semiconductor layer 106 is made of silicon (Si). In some other embodiments, the first semiconductor layer 104 is made of silicon germanium (Si_(1-x)Gex, 0.1<x<0.7), and the second semiconductor layer 106 is made of germanium (Ge).

In some embodiments, the first semiconductor layers 104 and the second semiconductor layers 106 are formed by a selective epitaxial growth (SEG) process, a chemical vapor deposition (CVD) process (e.g. low-pressure CVD (LPCVD), plasma enhanced CVD (PECVD)), a molecular epitaxy process, or another applicable process. In some embodiments, the first semiconductor layers 104 and the second semiconductor layers 106 are formed in-situ in the same chamber.

In some embodiments, the thickness of each of the first semiconductor layers 104 is in a range from about 1.5 nanometers (nm) to about 20 nm. Terms such as “about” in conjunction with a specific distance or size are to be interpreted as not to exclude insignificant deviation from the specified distance or size and may include for example deviations of up to 20%. In some embodiments, the first semiconductor layers 104 are substantially uniform in thickness. In some embodiments, the thickness of each of the second semiconductor layers 106 is in a range from about 1.5 nm to about 20 nm. In some embodiments, the second semiconductor layers 106 are substantially uniform in thickness.

Next, a number of first hard mask layers 108 are formed over the first semiconductor layers 104. In some embodiments, each of the first hard mask layer 108 is made of silicon nitride, silicon carbon nitride (SiCN), or applicable material. In some embodiments, the first hard mask layers 108 are formed by a deposition process, such as low-pressure CVD (LPCVD) process, plasma enhanced CVD (PECVD) process, or another deposition process.

Next, as shown in FIG. 1B, a number of fin structures 110 are formed, in accordance with some embodiments. The fin structures 110 include a first fin structure (or first stacked structure) 110 a and a second fin structure (or second stacked structure) 110 b.

The first hard mask layer 108 is patterned firstly. Then, the first semiconductor layers 104 and the second semiconductor layers 106 are patterned by using the patterned first hard mask layer 108 as a mask. The fin structures 110 are formed by performing a patterning process on the first semiconductor layers 104 and the second semiconductor layers 106. The patterning process includes a photolithography process and an etching process. The photolithography process includes photoresist coating (e.g., spin-on coating), soft baking, mask aligning, exposure, post-exposure baking, developing the photoresist, rinsing and drying (e.g., hard baking). The etching process includes a dry etching process or a wet etching process.

As shown in FIG. 1B, there is a first center-to-center pitch P₁ between two adjacent fin structures 110. In some embodiments, the first center-to-center pitch P₁ is in a range from about 20 nm to about 50 nm.

Next, as shown in FIG. 1C, a seed layer 112 is formed on the sidewall surface of the first fin structure 110 a, the sidewall surface of the second fin structure 110 b, and over the first hard mask layer 108, in accordance with some embodiments. Afterwards, an insulating material 113 is formed over the substrate 102 and over the fin structures 110.

The seed layer 112 is made of silicon, silicon oxide, silicon nitride, or a combination thereof. In some embodiment, the seed layer 112 includes a bilayer structure, such as a silicon layer and a silicon oxide layer formed on the silicon layer. In some embodiments, the seed layer 112 is formed by using a thermal oxidation process, chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, another suitable process, or a combination thereof.

In some embodiments, the insulating material 113 is made of silicon oxide, silicon nitride, silicon oxynitride (SiON), another applicable insulating material, or a combination thereof. In some embodiments, the insulating material 113 is formed by a LPCVD process, plasma enhanced CVD (PECVD) process, high density plasma CVD (HDP-CVD) process, high aspect ratio process (HARP) process, flowable CVD (FCVD) process, atomic layer deposition (ALD) process, another suitable method, or a combination thereof.

Next, as shown in FIG. 1D, a portion of the insulating material 113 is removed to form an isolation structure 114, in accordance with some embodiments. As a result, top portions of the fin structures 110 are above the isolation structure 114. There is a trench 115 is between two adjacent fin structures 110. The first fin structure 110 a and the second fin structure 110 b are extended above the isolation structure 114.

Afterwards, a first liner 116 is formed on the sidewall surface of the first fin structure 110 a, the sidewall surface of the second fin structure 110 b and the sidewall surface and the top surface of the first hard mask layer 108. It should be noted that the first liner 116 is selectively formed on the seed layer 112, and not formed on the isolation structure 114. In some embodiments, the seed layer 112 is made of silicon, and the first liner 116 is made of silicon germanium (SiGe). The trench 115 is not completely filled with the first liner 116. More specifically, the first liners 116 are formed on opposite sidewall surfaces of the trench 115.

Next, as shown in FIG. 1E, a dummy fin structure 118 is formed in the trench 115, in accordance with some embodiments. In some embodiments, the dummy fin structure 118 and the isolation structure 114 are made of different materials, and therefore an interface is between the dummy fin structure 118 and the isolation structure 114. The first liner 116 is between the dummy fin structure 118 and the first fin structure 110 a.

A dummy fin material is formed over the isolation structure 114, the fin structure 110, the first liner 116 and the first hard mask layer 108, and then a portion of the dummy fin material is removed to form the dummy fin structure 118. The dummy fin structure 118 is formed over the isolation structure 114 and is surrounded by the first liner 116. The dummy fin structure 118 is formed between the first fin structure 110 a and the second fin structure 110 b. In some embodiments, the portion of the dummy fin material is removed by a removal process, such as an etch-back process, chemical mechanical polishing (CMP), or a combination thereof.

After the portion of the dummy fin material is removed, a recess (not shown) is formed over the top surface of the dummy fin structure 118. Next, a capping layer 120 is formed over the dummy fin structure 118, the first liner 116, and the first hard mask layer 108. Next, a portion of the capping layer 120 is removed to expose the top surface of the first hard mask layer 108, and the top surface of the first liner 116. In some embodiments, the portion of the capping layer 120 is removed by a planarizing process, such as chemical mechanical polishing (CMP) process.

In some embodiments, the dummy fin structure 118 is made of low-k dielectric material with k value smaller than 7 (<7), such as silicon oxide, silicon nitride, silicon oxynitride (SiON), silicon carbon oxynitride (SiCON), another applicable insulating material, or a combination thereof. In some embodiments, the dummy fin structure 118 is formed by a LPCVD process, plasma enhanced CVD (PECVD) process, high density plasma CVD (HDP-CVD) process, high aspect ratio process (HARP) process, flowable CVD (FCVD) process, atomic layer deposition (ALD) process, another suitable method, or a combination thereof.

In some embodiments, the capping layer 120 is made of a high-k dielectric material with a K value greater than 7 (>7). The high-k dielectric material may include hafnium oxide (HfO₂), zirconium oxide (ZrO₂), aluminum oxide (Al₂O₃), hafnium alumina oxide (HfAlOx), hafnium silicon oxide (HfSiOx), hafnium silicon oxynitride, hafnium tantalum oxide (HfTaOx), hafnium titanium oxide (HfTiOx), hafnium zirconium oxide (HfZrOx), or the like. In some embodiments, the capping layer 120 is formed by a LPCVD process, plasma enhanced CVD (PECVD) process, high density plasma CVD (HDP-CVD) process, high aspect ratio process (HARP) process, flowable CVD (FCVD) process, atomic layer deposition (ALD) process, another suitable method, or a combination thereof.

As shown in FIG. 1E, the isolation structure 114 has a first width W₁ in a horizontal direction, the dummy fin structure 118 has a second width W₂ in the horizontal direction. The second width W₂ is smaller than the first width W₁. In some embodiments, the first width W₁ of the isolation structure 114 is in a range from about 15 nm to about 60 nm. In some embodiments, the second width W₂ of the dummy fin structure 118 is in a range from about 5 nm to about 50 nm. In some embodiments, a ratio of the second width W₂ of the first width W₁ is in a range from about 0.1 to about 0.9. When the range of the first W₁ and/or the second width W₂ is within the above-mentioned range, the reliability of the semiconductor device structure 100 a is improved (passing the TDDB (time dependent dielectric breakdown) reliability measurement). The TDDB reliability measurement can evaluate the reliability of gate dielectric layer by evaluating the dielectric breakdown strength.

In some embodiments, the dummy fin structure 118 has a first height H₁ in a vertical direction. The capping layer 120 has a second height H₂ measured in a vertical direction. In some embodiments, the second height H₂ is in a range from about 10 nm to about 30 nm. In some embodiments, a ratio of the second height H₂ to the first height H₁ is in a range from about 0.1 to about 0.7.

Next, as shown in FIG. 1F, an etching stop layer 121 is formed over the capping layer 120, the first hard mask layer 108 and the first liner 116, in accordance with some embodiments. The top surface of the capping layer 120, the top surface of the first hard mask layer 108 and the top surface of the first liner 116 form a substantially planar top surface. Therefore, the etching stop layer 121 is formed over the substantially planar top surface. As used herein, a structure is “substantially planar” if the deviation of the structure from a plane is within the statistical atomic level variations inherent within semiconductor processing methods known in the art.

Afterwards, a dummy gate structure 122 is formed over the etching stop layer 121. A second mask layer 126 is formed over the dummy gate structure 122, and a third mask layer 128 is formed over the second mask layer 126.

In some embodiments, the etching stop layer 121 is made of silicon oxide. The etching stop layer 121 is formed by a deposition process, such as CVD (such as PECVD, HARP, or a combination thereof) process, ALD process, another applicable process, or a combination thereof. In some embodiments, the dummy gate structure 122 is made of polycrystalline-silicon (poly-Si) or poly-crystalline silicon-germanium (poly-SiGe). The dummy gate structure 122 is formed by a deposition process and a patterning process by using the second mask layer 126 and the third mask layer 128 as masks.

In some embodiments, the second mask layer 126 and the third mask layer 128 are independently made of silicon oxide, silicon nitride, silicon carbon nitride (SiCN), or applicable material. In some embodiments, the second mask layer 126 and the third mask layer 128 are independently formed by a deposition process, such as CVD process, ALD process, another applicable process, or a combination thereof.

Next, as shown in FIG. 1G, a gate spacer layer 130 is formed on opposite sidewall surfaces of the dummy gate structure 122, in accordance with some embodiments.

In some embodiments, the gate spacer layer 130 is made of a dielectric material, such as silicon oxide (SiO₂), silicon nitride (SiN), silicon carbide (SiC), silicon oxynitride (SiON), silicon carbon nitride (SiCN), silicon oxide carbonitride (SiOCN), or a combination thereof. In some embodiments, the gate spacer layer 130 is formed by a deposition process, such as CVD process, ALD process, another applicable process, or a combination thereof. In some embodiments, there is a first spacing S₁ between two adjacent spacers 130 of two adjacent dummy gate structure 122. In some embodiments, the first spacing S₁ is in a range from about 5 nm to about 120 nm. When the first spacing Si is within the above-mentioned range, the removal process or filling process for forming the subsequent elements have enough processing window to operated.

Next, some regions not covered by the dummy gate structure 122 are removed. More specifically, a portion of the etching stop layer 121, a portion of the capping layer 120, a portion of the first liner 116, and a portion of the fin structure 110 are removed to form a number of S/D recesses 131. Next, a portion of the first liner 116 and a portion of the first semiconductor layers 104 below the dummy gate structure 122 are removed to form a cavity 135.

It should be noted that the capping layer 120 is made of high-k dielectric material, and the dummy fin structure 118 is made of low-k dielectric material. In some embodiments, the capping layer is made of the high-k dielectric material with k value greater than 7 (>7), and the dummy fin structure 118 is made of low-k dielectric material with k value smaller than 7 (<7). The capping layer 120 and the dummy fin structure 118 are made of different material to have different etching rates. The capping layer 120 not covered by the dummy gate structure 122 is removed, but the dummy fin structure 118 directly below the removed capping layer 120 is left since the etching selectively of the capping layer 120 to the dummy fin structure 118 is high. Furthermore, since the portion of the first liner 116 is removed, a portion of the isolation structure 114 is exposed by the S/D recesses 131.

Next, as shown in FIG. 1H, an inner spacer layer 136 is formed in the cavity 135, in accordance with some embodiments. The inner spacer layer 136 is configured to as a barrier between an S/D structure 138 (formed later, FIG. 1I) and a gate structure 160 a (formed later, as shown in FIG. 2E). The inner spacer layer 136 can reduce the parasitic capacitance between the S/D structure 138 (formed later, FIG. 1I) and the gate structure 160 a (formed later, as shown in FIG. 2E).

The inner spacer layer 136 is directly below the gate spacer layer 130. The inner spacer layer 136 is formed on the sidewall surface of the first fin structure 110 a and the sidewall surface of the second fin structure 110 b. In addition, the inner spacer layer 136 is formed on the sidewall surface of the capping layer 120.

In some embodiments, the inner spacer layer 136 is made of silicon carbon nitride (SiCN), silicon oxide carbonitride (SiOCN), or a combination thereof. In some embodiments, the inner spacer layer 136 is formed by a deposition process, such as CVD process, ALD process, another applicable process, or a combination thereof.

Next, as shown in FIG. 1I, a number of S/D structures 138 are formed in the S/D recesses 131, in accordance with some embodiments.

Each of the S/D structures 138 may include silicon germanium (SiGe), indium arsenide (InAs), indium gallium arsenide (InGaAs), indium antimonide (InSb), gallium arsenide (GaAs), gallium antimonide (GaSb), indium aluminum phosphide (InAlP), indium phosphide (InP), or a combination thereof. The S/D structures 138 may doped with one or more dopants. In some embodiments, the S/D structures 138 are silicon (Si) doped with phosphorus (P), arsenic (As), antimony (Sb), or another applicable dopant. Alternatively, one of the S/D structures 138 is silicon germanium (SiGe) doped with boron (B) or another applicable dopant.

In some embodiments, the S/D structures 138 are formed by an epitaxy or epitaxial (epi) process. The epi process may include a selective epitaxial growth (SEG) process, CVD deposition techniques (e.g., vapor-phase epitaxy (VPE) and/or ultra-high vacuum CVD (UHV-CVD)), molecular beam epitaxy, or other suitable epi processes.

Next, as shown in FIG. 1J, a contact etch stop layer (CESL) 140 is formed over the S/D structures 138, and an inter-layer dielectric (ILD) layer 142 is formed over the CESL 140, in accordance with some embodiments. The CESL 140 is between the S/D structures 138 and the ILD layer 142. Next, a portion of the ILD layer 142 is removed to expose the top surface of the dummy gate structure 122. In some embodiments, the portion of the ILD layer 142 is removed by a planarizing process, a chemical mechanical polishing (CMP) process.

In some embodiments, the CESL 140 is made of silicon nitride, silicon oxynitride, and/or other applicable materials. The CESL 140 may be formed by plasma enhanced chemical vapor deposition (CVD) process, low pressure CVD process, atomic layer deposition (ALD) process, or another applicable processes.

The ILD layer 142 may include multilayers made of multiple dielectric materials, such as silicon oxide, silicon nitride, silicon oxynitride, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), low-k dielectric material, and/or other applicable dielectric materials. Examples of low-k dielectric materials include, but are not limited to, fluorinated silica glass (FSG), carbon doped silicon oxide, amorphous fluorinated carbon, parylene, bis-benzocyclobutenes (BCB), or polyimide. The ILD layer 142 may be formed by chemical vapor deposition (CVD), physical vapor deposition, (PVD), atomic layer deposition (ALD), spin-on coating, or other applicable processes.

Next, as shown in FIG. 1K, the dummy gate structure 122 and the etching stop layer 121 are removed, in accordance with some embodiments. As a result, a trench 147 is formed to expose the first hard mask layer 108.

Next, a fourth mask layer 144 and a fifth mask layer 146 are formed in the trench 147 and over and the ILD layer 142. The fourth mask layer 144 and the fifth mask layer 146 are independently made of silicon oxide, silicon nitride, silicon carbon nitride (SiCN), or applicable material. In some embodiments, the fourth mask layer 144 and the fifth mask layer 146 are independently formed by a deposition process, such as CVD process, ALD process, another applicable process, or a combination thereof.

FIGS. 2A-2E show cross-sectional representations of various stages of forming the semiconductor device structure 100 a after FIG. 1K, in accordance with some embodiments of the disclosure. FIG. 2A shows a cross-sectional representation of the semiconductor device structure along line AA′ shown in FIG. 1K, in accordance with some embodiments.

As shown in FIG. 2A, a number of dummy fin structures 118 are formed over the isolation structure 114, and a number of capping layer 120 are formed over the dummy fin structures 118. The fourth mask layer 144 formed over the capping layer 120 is configured to protect the capping layer 120 from being removed.

Subsequently, as shown in FIG. 2B, some capping layers 120 are removed by the removal process, but some capping layers 120 are protected by the fourth mask layer 144, in accordance with some embodiments. The removal process may be a wet etching process or a dry etching process. The capping layers 120 are surrounded by the first liners 116. During the removal process, a portion of the first liners 116 is removed. Afterwards, the fifth mask layer 146 is removed.

Next, as shown in FIG. 2C, the fourth mask layer 144 is removed, and the first hard mask layer 108 is removed, in accordance with some embodiments. Next, the first liners 116 are removed to form recess 149, and the first semiconductor layers 104 are removed to form gaps 151. As a result, a number of stacked wire structures made of the second semiconductor layers 106 are obtained. In some embodiments, the stacked structure includes a number of nanostructures (e.g. second semiconductor layers 106).

In some embodiments, the fourth mask layer 144 is removed by an ashing process. In some embodiments, the first hard mask layer 108, the first liners 116 and the first semiconductor layers 104 are independently removed by an etching process, such as a wet etching process, a dry etching process, or a combination thereof. In some embodiments, the first liners 116 are made of silicon germanium (SiGe), and the first semiconductor layers 104 are made of silicon germanium (SiGe), and therefore the first liners 116 and the first semiconductor layers 104 are removed simultaneously.

Each of the second semiconductor layers (or nanostructures) 106 has a width Ws and a height Hs. In some embodiments, the width Ws is in a range from about 4 nm to about 60 nm, and the height Hs is in a range from about 3 nm to about 8 nm. There is a second spacing S₂ between the sidewall of the dummy fin structure 118 and the sidewall of the second semiconductor layer 106. In some embodiments, the second spacing S₂ is in a range from about 5 nm to about 15 nm. When the second spacing S₂ is within the above-mentioned range, there is enough processing window to form the inner spacer layer 136 (formed before). There is a third spacing S₃ between two adjacent second semiconductor layers 106. In some embodiments, the third spacing S₃ is in a range from about 5 nm to about 15 nm. When the second spacing S₂ and the third spacing S₃ are within the above-mentioned range, the gate structure 160 (formed later) can be filled into the space.

Next, as shown in FIG. 2D, a gate structure 160 is formed in the recess 149 and the gap 151, in accordance with some embodiments. The gate structure 160 includes an interfacial layer 152, a gate dielectric layer 154 and a gate electrode layer 156.

The interfacial layer 152 is conformally formed along the main surfaces of the second semiconductor layers 106 to surround the second semiconductor layers 106. In some embodiments, the interfacial layer 152 is made of a chemically formed silicon oxide.

In some embodiments, the gate dielectric layer 154 is a high-k dielectric layer. In some embodiments, the high-k gate dielectric layer is made of one or more layers of a dielectric material, such as HfO₂, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, zirconium oxide, aluminum oxide, titanium oxide, hafnium dioxide-alumina (HfO₂—Al2O₃) alloy, another suitable high-k dielectric material, or a combination thereof. In some embodiments, the high-k gate dielectric layer 154 is formed using CVD, ALD, another suitable method, or a combination thereof.

The gate electrode layer 156 is formed on the gate dielectric layer 154, in accordance with some embodiments. The gate electrode layer 156 fills the gaps 151. In some embodiments, the gate electrode layer 156 is made of one or more layers of conductive material, such as polysilicon, aluminum, copper, titanium, tantalum, tungsten, cobalt, molybdenum, tantalum nitride, nickel silicide, cobalt silicide, TiN, WN, TiAl, TiAlN, TaCN, TaC, TaSiN, metal alloys, another suitable material, or a combination thereof. In some embodiments, the gate electrode layer 156 is formed using CVD, ALD, electroplating, another suitable method, or a combination thereof.

In some embodiments, the gate electrode layer 156 includes a work function layer. The work function layer is made of metal material, and the metal material may include N-work-function metal or P-work-function metal. The N-work-function metal includes tungsten (W), copper (Cu), titanium (Ti), silver (Ag), aluminum (Al), titanium aluminum alloy (TiAl), titanium aluminum nitride (TiAlN), tantalum carbide (TaC), tantalum carbon nitride (TaCN), tantalum silicon nitride (TaSiN), manganese (Mn), zirconium (Zr) or a combination thereof. The P-work-function metal includes titanium nitride (TiN), tungsten nitride (WN), tantalum nitride (TaN), ruthenium (Ru) or a combination thereof.

Next, as shown in FIG. 2E, a portion of the gate electrode layer 156 is removed, in accordance with some embodiments. In some embodiments, the portion of the gate electrode layer 156 is removed by a planarizing process, such as chemical mechanical polishing (CMP) process. Afterwards, the gate electrode layer 156 is etched back by an etching process, and therefore the capping layer 120 protrudes above the top surface of the gate electrode layer 156. More specifically, the protruded capping layer 120 is used to cut the gate electrode layer 156, and therefore a first gate structure 160 a and a second gate structure 160 b are formed. The first gate structure 160 a and the second gate structure 160 b are separated by the dummy fin structure 118 and the capping layer 120. The first gate structure 160 a and the second gate structure 160 b each perform different functions.

The top surface of the capping layer 120 is higher than the top surface of the first fin structure 110 a and the second fin structure 110 b. More specifically, the top surface of the capping layer 120 is higher than the top surface of each of the second semiconductor layers 106. The top surface of the capping layer 120 is higher than the top surface of the first gate structure 160 a and the top surface of the second gate structure 160 b.

Afterwards, a conductive layer 162 is selectively formed over the gate electrode layer 156, and a sacrificial layer 164 is formed over the conductive layer 162. The conductive layer 162 is used to reduce the resistance of the gate electrode layer 156. In some embodiments, the conductive layer 162 is made of tungsten (W). It should be noted that the conductive layer 162 is selectively formed over the gate electrode layer 156, but not formed over the capping layer 120. In some embodiments, the sacrificial layer 164 is made of silicon nitride, silicon oxynitride (SiON), silicon carbide (SiC), another applicable insulating material, or a combination thereof.

In some embodiments, a surface treatment process is performed on the top surface of the gate electrode layer 156 to form some hydrogen radicals, and then a deposition process with a precursor is performed on the treated top surface of the gate electrode layer 156 to form the conductive layer 162. In some embodiments, the surface treatment process includes using hydrogen (H₂) gas. The precursor may include tungsten (W)-containing material, such as tungsten hexafluoride (WF₆) or tungsten hexachloride (WCl₆). The precursor reacts with the hydrogen radicals to form the conductive layer 162.

The dummy fin structure 118 and the capping layer 120 are used as the barrier structure of the first gate structure 160 a and the second gate structure 160 b. The dummy fin structure 118 and the capping layer 120 are formed before the formation of the gate structure 160, and therefore the self-aligned cut metal gate (SACMG) is formed to prevent the alignment issue. The dummy fin structure 118 and the capping layer 120 are made of different materials to have etching selectivity during the removal process shown in FIG. 1G.

In addition, the top surface of the first hard mask layer 108, the top surface of the first liner 116 and the top surface of the capping layer 120 form a planar top surface, and the etching stop layer 121 is formed over the planar top surface. It should be noted that the dummy gate structure 122 is also formed over the planar top surface, and the dummy gate structure 122 is not filled into a gap between two fin structures. Therefore, the void issue when the dummy gate structure 122 filled into the gap is prevented.

The inner spacer layer 136 is between the S/D structure 138 and the gate structure 160 to be effectively used as a barrier to reduce the parasitic capacitance between the S/D structure 138 and the gate structure 160.

If the dummy fin structure is formed on a remaining fin structure (the height of the remaining fin structure is lower than the fin structure), the distance between the first gate structure 160 a and the second gate structure 160 b will be twice of the pitch of the two adjacent fin structures 110. In this disclosure, the dummy fin structure is directly formed on the isolation structure 114, and therefore the distance between the first gate structure 160 a and the second gate structure 160 b is about the pitch of the two adjacent fin structures 110. Therefore, the distance between two gate structures is greatly reduced.

FIG. 2E′ shows a cross-sectional representation of the semiconductor device structure 100 a′, in accordance with some embodiments of the disclosure. The semiconductor device structure 100 a′ of FIG. 2E′ is similar to the semiconductor device structure 100 a of FIG. 2E, the differences between FIG. 2E′ and FIG. 2E are that there is a third gate structure 160 c connecting the second gate structure 160 b, but the second gate structure 160 b and the third gate structure 160 c are made of different materials.

As shown in FIG. 2E′, there is an interface 165 between the second gate structure 160 b and the third gate structure 160 c. In some embodiments, the second gate structure 160 b is a PMOS structure, and the third gate structure 160 c is a NMOS structure. In some other embodiments, the second gate structure 160 b is a NMOS structure, and the third gate structure 160 c is a PMOS structure. In some embodiments, the gate electrode layer 156 of the second gate structure 160 b and the gate electrode layer 156 of the third gate structure 160 c are made of different materials. In some embodiments, the gate electrode layer 156 of the second gate structure 160 b includes a p-work function layer, and the gate electrode layer 156 of the third gate structure 160 c includes an n-work function layer. In some other embodiments, the gate electrode layer 156 of the second gate structure 160 b includes an n-work function layer, and the gate electrode layer 156 of the third gate structure 160 c includes a p-work function layer. The n-work-function metal includes tungsten (W), copper (Cu), titanium (Ti), silver (Ag), aluminum (Al), titanium aluminum alloy (TiAl), titanium aluminum nitride (TiAlN), tantalum carbide (TaC), tantalum carbon nitride (TaCN), tantalum silicon nitride (TaSiN), manganese (Mn), zirconium (Zr) or a combination thereof. The p-work-function metal includes titanium nitride (TiN), tungsten nitride (WN), tantalum nitride (TaN), ruthenium (Ru) or a combination thereof.

FIG. 3 shows a cross-sectional representation of the semiconductor device structure 100 a along line BB′ shown in FIG. 1K, in accordance with some embodiments of the disclosure.

As shown in FIG. 3 , the inner spacer layer 136 is below the gate spacer layer 130. The dummy fin structure 118 are surrounded by the inner spacer layer 136, and the second semiconductor layers 106 are surrounded by the inner spacer layer 136. In addition, the capping layer 120 is surrounded by the inner spacer layer 136 and is in direct contact with the inner spacer layer 136.

FIG. 4 shows a top-view representation of the semiconductor device structure 100 a, in accordance with some embodiments of the disclosure. FIG. 4 is a top-view of the semiconductor device structure 100 a before the conductive layer 162 is formed over the gate electrode layer 156.

As shown in FIG. 4 , the capping layer 120 is used as a barrier structure to separate the first gate structure 160 a and the second gate structure 160 b. The capping layer 120 is formed in a region between the first fin structure 110 a and the second fin structure 110 b.

FIG. 5A shows a perspective representation of a semiconductor device structure 100 b, in accordance with some embodiments of the disclosure. The semiconductor device structure 100 b is a fin field effect transistor (FinFET). FIG. 5B shows a cross-sectional representation of the semiconductor device structure along line BB′ shown in FIG. 5A, in accordance with some embodiments of the disclosure. The semiconductor device structure 100 b of FIG. 5A is similar to the semiconductor device structure 100 a of FIG. 1K, the differences between FIG. 5A and FIG. 1K are that fin structure 110 is in FIG. 5A (stacked first semiconductor layers 104 and second semiconductor layers 106 are in FIG. 1K), and a silicide layer 172 is formed over the S/D structure 138, and an S/D contact structure 174 is formed over the silicide layer 172.

As shown in FIGS. 5A and 5B, the dummy fin structure 118 is formed over the isolation structure 114, between the first fin structure 110 a and the second fin structure 110 b, and the capping layer 120 is formed over the dummy fin structure 118. The first gate structure 160 a and the second gate structure 160 b are separated by the dummy fin structure 118 and the capping layer 120. The top surface of the capping layer 120 is higher than the top surface of the first fin structure 110 a and the second fin structure 110 b.

FIG. 5C shows a cross-sectional representation of the semiconductor device structure along line CC′ shown in FIG. 5A, in accordance with some embodiments.

As shown in FIG. 5C, the inner spacer layer 136 is below the gate spacer layer 130. The dummy fin structure 118 is surrounded by the inner spacer layer 136, and the fin structure 110 is surrounded by the inner spacer layer 136. The inner spacer layer 136 is formed on the sidewall surface of the fin structure 110, and on the sidewall surface of the capping layer 120.

FIG. 5D shows a cross-sectional representation of the semiconductor device structure along line DD′ shown in FIG. 5A, in accordance with some embodiments.

As shown in FIG. 5D, the silicide layer 172 is formed over the S/D structure 138, and the S/D contact structure 174 is formed over the silicide layer 172.

FIGS. 6A-6G show perspective representations of various stages of forming of a semiconductor device structure 100 c, in accordance with some embodiments of the disclosure of the disclosure. The semiconductor device structure 100 c of FIG. 6A is similar to the semiconductor device structure 100 a of FIG. 1D, the difference between FIG. 6A and FIG. 1D is that a second dummy fin structure 118 b has a U-shaped structure with a recessed portion, and a third dummy fin structure 118 c has a U-shaped structure with a recessed portion. The shape of the first dummy fin structure 118 a is different from the shape of the second dummy fin structure 118 b.

As shown in FIG. 6A, the first center-to-center pitch P₁ is between the first fin structure (or first stacked structure) 110 a and the second fin structure (or second stacked structure) 110 b, the second center-to-center pitch P₂ is between the second fin structure 110 b and the third fin structure (or third stacked structure) 110 c. The third center-to-center pitch P₃ is between the third fin structure 110 c and the fourth fin structure (or fourth stacked structure) 110 d. In some embodiments, the third center-to-center pitch P₃ is greater than the second center-to-center pitch P₂, and the second center-to-center pitch P₂ is greater than the first center-to-center pitch P₁. Since the gap filling ability of the dummy fin structure 118 is limited to the kind of materials, the trench 115 may not filled with the second dummy fin structure 118 b. Therefore, the U-shaped second dummy fin structure 118 b and the U-shaped third dummy fin structure 118 c are obtained. The second dummy fin structure 118 b has a recession portion in the middle portion, and the third dummy fin structure 118 c has a recession portion in the middle portion.

The isolation structure 114 includes a first isolation layer 114 a and a second isolation layer 114 b, and a third isolation structure 114 c. The first isolation layer 114 a has a first width W₁ in the horizontal direction, and the second isolation layer 114 b has a third width W₃ in the horizontal direction. The third isolation layer 114 c has a fifth width W₅ in the horizontal direction. In some embodiments, the third width W₃ of the second isolation layer 114 b is larger than the first width W₁ of the first isolation layer 114 a. In some embodiments, the fifth width W₅ of the third isolation structure 114 c is greater than the third width W₃ of the second isolation layer 114 b.

The first isolation layer 114 a is directly below the first dummy fin structure 118 a, and the second isolation structure 114 b is directly below the second dummy fin structure 118 b. The third isolation structure 114 c is directly below the third dummy fin structure 118 c.

Afterwards, as shown in FIG. 6B, a filling layer 119 is formed in the recession of the second dummy fin structure 118 b and the third dummy fin structure 118 c, in accordance with some embodiments of the disclosure. In some embodiments, the top surface of the filling layer 119 is substantially leveled with the top surface of the second dummy fin structure 118 b and the top surface of the third dummy fin structure 118 c.

In some embodiments, the filling layer 119 has a fourth width W₄ in the horizontal direction. In some embodiments, the fourth width W₄ is greater than the second width W₂ of the first dummy fin structure 118 a. In some embodiments, the third width W₃ is in a range from about 20 nm to about 100 nm. In some embodiments, the fourth width W₄ is in a range from about 10 nm to about 90 nm.

Next, the capping layer 120 is formed over the first dummy fin structure 118 a, the second dummy fin structure 118 b and the filling layer 119. In some embodiments, the filling layer 119 and the dummy fin structure 118 are made of different materials. In some embodiments, the filling layer 119 is formed by a flowable CVD (FCVD) process.

Next, as shown in FIG. 6C, the etching stop layer 121 is formed over the capping layer 120, the first hard mask layer 108 and the first liner 116, in accordance with some embodiments.

Afterwards, the dummy gate structure 122 is formed over the etching stop layer 121. The second mask layer 126 is formed over the dummy gate structure 122, and the third mask layer 128 is formed over the second mask layer 126.

Afterwards, as shown in FIG. 6D, a gate spacer layer 130 is formed on opposite sidewall surfaces of the dummy gate structure 122, in accordance with some embodiments.

Next, some regions not covered by the dummy gate structure 122 are removed. More specifically, a portion of the etching stop layer 121, a portion of the capping layer 120, a portion of the first liner 116, and a portion of the fin structure 110 are removed to form a number of S/D recesses 131. Next, a portion of the first liner 116 and a portion of the first semiconductor layers 104 below the dummy gate structure 122 are removed to form the cavity 135.

It should be noted that the capping layer 120 is made of high-k dielectric material, and the dummy fin structure 118 is made of low-k dielectric material. The capping layer 120 and the dummy fin structure 118 are made of different material to have different etching rates. The capping layer 120 not covered by the dummy gate structure 122 is removed, but the dummy fin structure 118 directly below the removed capping layer 120 is left since the etching selectively of the capping layer 120 to the dummy fin structure 118 is high. Furthermore, since the portion of the first liner 116 is removed, a portion of the isolation structure 114 is exposed by the S/D recesses 131.

Next, as shown in FIG. 6E, the inner spacer layer 136 is formed in the cavity 135, in accordance with some embodiments. The inner spacer layer 136 is configured to as a barrier between an S/D structure 138 (formed later, FIG. 6F) and a gate structure 160 a (formed later, as shown in FIG. 9E). The inner spacer layer 136 can reduce the parasitic capacitance between the S/D structure 138 (formed later, FIG. 6F) and the gate structure 160 a (formed later, as shown in FIG. 9E).

Subsequently, as shown in FIG. 6F, a number of S/D structures 138 are formed in the S/D recesses 131, in accordance with some embodiments. In some embodiments, two adjacent S/D structures 138 are separated from each other by the first dummy fin structure 118 a. In some embodiments, two adjacent S/D structures 138 are separated from each other by the second fin structure 118 b and the filling layer 119.

Afterwards, as shown in FIG. 6G, the contact etch stop layer (CESL) 140 is formed over the S/D structures 138, and the inter-layer dielectric (ILD) layer 142 is formed over the CESL 140, in accordance with some embodiments. Afterwards, the semiconductor device structure 100 c continues to proceed to similar processes. illustrated in FIG. 1K.

FIGS. 9A-9E show cross-sectional representations of various stages of forming the semiconductor device structure 100 c after the structure along line EE′ shown in FIG. 6G, in accordance with some embodiments of the disclosure.

As shown in FIG. 9A, the dummy gate structure 122 and the etching stop layer 121 are removed, in accordance with some embodiments. As a result, the trench 147 is formed to expose the first hard mask layer 108. Afterwards, the fourth mask layer 144 and the fifth mask layer 146 are formed in the trench 147 and over and the ILD layer 142. The fourth mask layer 144 formed over the capping layer 120 is configured to protect the capping layer 120 from being removed.

Next, as shown in FIG. 9B, a portion of the capping layer 120, which is over the second dummy fin structure 118 b, is removed by the removal process, but another portion of the capping layers 120, which is over the third dummy fin structure 118 c, is protected by the fourth mask layer 144, in accordance with some embodiments. The removal process may be a wet etching process or a dry etching process. The capping layer 120 is surrounded by the first liners 116. During the removal process, a portion of the first liners 116 is removed. The remaining first liners 116 have a tapered edge which is gradually tapered from bottom to top. In addition, the tapered edge ends at the top surface of the second dummy fin structure 118 b. Afterwards, the fifth mask layer 146 is removed.

Afterwards, as shown in FIG. 9C, the fourth mask layer 144 is removed, and the first hard mask layer 108 is removed, in accordance with some embodiments. Next, the first liners 116 are removed to form recess 149, and the first semiconductor layers 104 are removed to form gaps 151. As a result, a number of stacked structures made of the second semiconductor layers 106 are obtained. A number of nanostructures (e.g. the second semiconductor layers) are stacked in the vertical direction.

It should be noted that the capping layer 120 directly above the second dummy fin structure 118 b is removed while the capping layer 120 directly above the first dummy fin structure 118 a is left. Therefore, the top surface of the capping layer 120 is higher than the top surface of the first stacked structure (stacked second semiconductor layers 106) and the top surface of the second stacked structure (stacked second semiconductor layers 106).

Subsequently, as shown in FIG. 9D, the gate structure 160 is formed in the recess 149 and the gap 151, in accordance with some embodiments. The gate structure 160 includes the interfacial layer 152, the gate dielectric layer 154 and the gate electrode layer 156.

Next, as shown in FIG. 9E, a portion of the gate electrode layer 156 is removed, in accordance with some embodiments. In some embodiments, the portion of the gate electrode layer 156 is removed by a planarizing process, such as chemical mechanical polishing (CMP) process. Afterwards, the gate electrode layer 156 is etched back by an etching process, and therefore the capping layer 120 protrudes above the top surface of the gate electrode layer 156. More specifically, the protruded capping layer 120 is used to cut the gate electrode layer 156, and therefore a first gate structure 160 a and a second gate structure 160 b are formed. The first gate structure 160 a and the second gate structure 160 b are separated by the first dummy fin structure 118 a and the capping layer 120. The first gate structure 160 a and the second gate structure 160 b each perform different functions.

The second gate structure 160 b has two portions including the first portion and the second portion. The second dummy fin structure 118 b is between the first portion and the second portion of the second gate structure 160 b.

The top surface of the capping layer 120 is higher than the top surface of the first fin structure 110 a and the second fin structure 110 b. More specifically, the top surface of the capping layer 120 is higher than the top surface of each of the second semiconductor layers 106. The top surface of the capping layer 120 is higher than the top surface of the first gate structure 160 a and the top surface of the second gate structure 160 b. In addition, in some embodiments, the top surface of the first dummy fin structure 118 a is higher than a top surface of the topmost of the first nanostructures (the second semiconductor layers 106).

Afterwards, the conductive layer 162 is selectively formed over the gate electrode layer 156, and the sacrificial layer 164 is formed over the conductive layer 162. The conductive layer 162 is used to reduce the resistance of the gate electrode layer 156. In some embodiments, the conductive layer 162 is made of tungsten (W). It should be noted that the conductive layer 162 is selectively formed over the gate electrode layer 156, but not formed over the capping layer 120.

FIG. 9E′ shows a cross-sectional representation of the semiconductor device structure 100 c′, in accordance with some embodiments of the disclosure. The semiconductor device structure 100 c′ of FIG. 9E′ is similar to the semiconductor device structure 100 c of FIG. 9E, the differences between FIG. 9E′ and FIG. 9E are that there is a third gate structure 160 c connecting the second gate structure 160 b, but the second gate structure 160 b and the third gate structure 160 c are made of different materials.

As shown in FIG. 9E′, there is an interface 165 between the second gate structure 160 b and the third gate structure 160 c. In some embodiments, the second gate structure 160 b is a PMOS structure, and the third gate structure 160 c is a NMOS structure. In some other embodiments, the second gate structure 160 b is a NMOS structure, and the third gate structure 160 c is a PMOS structure. The n-work-function metal includes tungsten (W), copper (Cu), titanium (Ti), silver (Ag), aluminum (Al), titanium aluminum alloy (TiAl), titanium aluminum nitride (TiAlN), tantalum carbide (TaC), tantalum carbon nitride (TaCN), tantalum silicon nitride (TaSiN), manganese (Mn), zirconium (Zr) or a combination thereof. The p-work-function metal includes titanium nitride (TiN), tungsten nitride (WN), tantalum nitride (TaN), ruthenium (Ru) or a combination thereof.

FIGS. 7A-7I show perspective representations of various stages of forming a semiconductor device structure 100 d, in accordance with some embodiments of the disclosure of the disclosure.

FIG. 7A is similar to, or the same as FIG. 1D, the fin structures 110 are extended above the isolation structure 114. The seed layer 112 is formed on sidewall surfaces of the fin structures 110, and the first liner 116 is formed on the seed layer 112.

Next, as shown in FIG. 7B, a second liner 117 is formed on the first liner 116, in accordance with some embodiments of the disclosure. The first liner 116 and the second liner 117 are made of different materials. The trench 115 is not completely filled with the first liner 116 and the second liner 117.

In some embodiments, the second liner 117 is made of dielectric layer, such as silicon nitride, silicon carbon nitride (SiCN), or applicable material. In some embodiments, the second liner 117 is formed by a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, a physical vapor deposition (PVD) or another applicable process.

Afterwards, as shown in FIG. 7C, the dummy fin structure 118 is formed in the trench 115, and the capping layer 120 is formed over the first liner 116 and the second liner 117, in accordance with some embodiments of the disclosure.

The first liner 116 is formed firstly, and then the second liner 117 is formed. Next, the dummy fin structure 118 is formed on the sidewall surface of the second liner 117, and therefore the dummy fin structure 118 is in direct contact with the second liner 117, but not in direct contact with the first liner 116.

Afterwards, as shown in FIG. 7D, the etching stop layer 121 is formed over the capping layer 120, the first hard mask layer 108 and the first liner 116, in accordance with some embodiments of the disclosure. Afterwards, the dummy gate structure 122 is formed over the etching stop layer 121. The second mask layer 126 is formed over the dummy gate structure 122, and the third mask layer 128 is formed over the second mask layer 126.

Afterwards, as shown in FIG. 7E, the gate spacer layer 130 is formed on opposite sidewall surfaces of the dummy gate structure 122, in accordance with some embodiments of the disclosure. Some layers not covered by the dummy gate structure 122 are removed to form the S/D recesses 131. Next, a portion of the first liner 116 and a portion of the first semiconductor layers 104 below the dummy gate structure 122 are removed to form a cavity 135. It should be noted that the second liner 117 is not removed while the portion of the first liner 116 is removed. The second liner 117 is left on the sidewall surface of the dummy fin structure 118 to increase the isolation effect between two adjacent S/D structure (formed later, as shown in FIG. 7G). The capping layer 120 is removed, but the dummy fin structure 118 and the second liner 117 are not removed.

Next, as shown in FIG. 7F, the inner spacer layer 136 is formed in the cavity 135, in accordance with some embodiments of the disclosure.

Afterwards, as shown in FIG. 7G, the S/D structures 138 are formed in the S/D recesses 131, in accordance with some embodiments of the disclosure. It should be noted that the first liner 116 and the second liner 117 are between two adjacent S/D structures 138.

Subsequently, as shown in FIG. 7H, the CESL 140 is formed over the S/D structures 138, and an inter-layer dielectric (ILD) layer 142 is formed over the CESL 140, in accordance with some embodiments of the disclosure.

Next, as shown in FIG. 7I, the dummy gate structure 122 and the etching stop layer 121 are removed, in accordance with some embodiments. As a result, a trench 147 is formed to expose the first hard mask layer 108.

FIGS. 8A-8E show cross-sectional representations of various stages of forming the semiconductor device structure 100 d after FIG. 7I, in accordance with some embodiments of the disclosure. FIG. 8A shows a cross-sectional representation of the semiconductor device structure along line EE′ shown in FIG. 7I, in accordance with some embodiments of the disclosure.

As shown in FIG. 8A, a number of capping layers 120 are formed over the isolation structure 114, and the fourth mask layer 144 is formed over a portion of the capping layers 120 to protect the capping layers 120 from being removed. The fifth mask layer 146 is formed over the fourth mask layer 144.

Next, as shown in FIG. 8B, some capping layers 120 are removed by the removal process, but some capping layers 120 are protected by the fourth mask layer 144, in accordance with some embodiments. The capping layers 120 are surrounded by the first liners 116. During the removal process, a portion of the first liners 116 is removed. Afterwards, the fifth mask layer 146 is removed.

Next, as shown in FIG. 8C, the fourth mask layer 144 is removed, and the first hard mask layer 108 is removed, in accordance with some embodiments. Next, the first liners 116 are removed to form recess 149, and the first semiconductor layers 104 are removed to form gaps 151. In some embodiments, the first liners 116 are made of silicon germanium (SiGe), and the first semiconductor layers 104 are made of silicon germanium (SiGe), and therefore, the first liners 116 and the first semiconductor layers 104 are simultaneously removed.

Afterwards, as shown in FIG. 8D, the second liner 117 which is directly below the trench 147 is removed, in accordance with some embodiments. It should be noted that the first liner 116 and the second liner 117 are made of different materials, and the first liner 116 and the second liner 117 are removed by separate processes. Furthermore, the second liner 117 which is in direct contact with the S/D structure 138 is not removed.

Next, as shown in FIG. 8E, the interfacial layer 152, the gate dielectric layer 154 and the gate electrode layer 156 are sequentially formed in the recess 149 and the gap 151, in accordance with some embodiments.

Next, a portion of the gate electrode layer 156 is removed, and therefore the top surface of the capping layer 120 is higher than the top surface of the gate electrode layer 156. As a result, the first gate structure 160 a and the second gate structure 160 b are separated by the dummy fin structure 118 and the capping layer 120.

Afterwards, the conductive layer 162 is selectively formed over the gate electrode layer 156, and the sacrificial layer 164 is formed over the conductive layer 162. The conductive layer 162 is used to reduce the resistance of the gate electrode layer 156.

The dummy fin structure 118 is a barrier structure between two adjacent S/D structures 138. As the dimensions of the fin structure 110 are gradually decreased, the width of the dummy fin structure 118 is gradually decreased. If the width of the dummy fin structure 118 is too small, the isolation effect of the dummy fin structure 118 may not be good enough. In addition, a first S/D contact structure (not shown) will be formed on the first S/D structures 138, but a distance of the first S/D contact structure and the second S/D structure (should be not electrically connected to the first S/D structure) become small since the width of the dummy fin structure 118 become small. The small distance may cause time dependent dielectric breakdown (TDDB). In order to prevent time dependent dielectric breakdown (TDDB), the second liner 117 is still left and is in direct contact with the S/D structure 138 to increase the distance between two adjacent S/D structures 138.

The dummy fin structure 118 and the capping layer 120 are used as the barrier structure of the first gate structure 160 a and the second gate structure 160 b. The dummy fin structure 118 and the capping layer 120 are formed before the formation of the gate structure 160, and therefore the self-aligned cut metal gate (SACMG) is formed to prevent the alignment issue. The dummy fin structure 118 and the capping layer 120 are made of different materials to have etching selectivity during the removal process.

Embodiments for forming a semiconductor device structure and method for formation the same are provided. The fin structures are formed above the substrate. The dummy fin structures are formed over the isolation structure and formed between two adjacent fin structures. A capping layer is formed over the dummy fin structures. A first gate structure and a second gate structure are formed over the fin structures, and are separated by the dummy fin structure and the capping layer. Since the dummy fin structure and the capping layer are formed before the formation of the first gate structure and the second gate structure, and therefore the self-aligned cut metal gate (SACMG) are formed. In addition, the distance between the first gate structure and the second gate structure is defined by the distance between two fin structures and is greatly reduced. The cut-metal gate process is self-aligned without alignment issued and the distance between two gate structures is reduced. Therefore, the yield of the semiconductor device structure is improved.

In some embodiments, a method for forming a semiconductor device structure is provided. The method includes forming a first fin structure and a second fin structure extending above an isolation structure, and forming a liner on a sidewall surface of the first fin structure and a sidewall surface of the second fin structure. The method also includes forming a dummy fin structure over the isolation structure, and the dummy fin structure is between the first fin structure and the second fin structure. The method further includes forming a capping layer over the dummy fin structure, and forming a dummy gate structure over the capping layer, the first fin structure and the second fin structure. The method includes forming a dielectric layer surrounding the dummy gate structure, and removing the dummy gate structure to form a trench in the dielectric layer. The method further includes removing the liner below the trench to form a first recess between the first fin structure and the dummy fin structure, and a second recess between the second fin structure and the dummy fin structure. The method includes forming a first gate structure in the first recess and a second gate structure in the second recess, respectively, and the first gate structure and the second gate structure are separated by the dummy fin structure and the capping layer.

In some embodiments, a method for forming a semiconductor device structure is provided. The method includes forming a first fin structure and a second fin structure over a substrate, and the first fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method also includes forming an isolation structure over the substrate, and a top portion of the first fin and a top portion of the second fin extend above the isolation structure, and a trench is between the first fin structure and the second fin structure. The method further includes forming a first liner in a portion of the trench, and forming a dummy fin structure in another portion of the trench. The first liner is between the dummy fin structure and the first fin structure. The method also includes forming a capping layer over the dummy fin structure, and forming a dummy gate structure over the capping layer, the first fin structure and the second fin structure. The method further includes removing a portion of the capping layer, a portion of the first liner and a portion of the first fin structure, and a portion of the second fin structure to form an S/D recess, and forming an S/D structure in the S/D recess. The method includes forming a dielectric layer surrounding the dummy gate structure and over the S/D structure, and removing the dummy gate structure to form a trench in the dielectric layer. The method further includes removing a portion of the first semiconductor layers to form gaps, and forming a gate structure in the gaps. The top surface of the capping layer is higher than a top surface of the gate structure.

In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes an isolation structure formed over a substrate, and a first fin structure and a second fin structure extending above the isolation structure. The semiconductor device structure also includes a dummy fin structure formed over the isolation structure, and the dummy fin structure is between the first fin structure and the second fin structure. The semiconductor device structure includes a capping layer formed over the dummy fin structure, and the top surface of the capping layer is higher than the top surface of the first fin structure and the top surface of the second fin structure. The semiconductor device structure further includes a first gate structure formed over first fin structure, and a second gate structure formed over the second fin structure. The first gate structure and the second gate structure are separated by the dummy fin structure and the capping layer.

In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes an isolation structure formed over a substrate, and a first stacked structure and a second stacked structure extending above the isolation structure. The first stacked structure includes a plurality of first nanostructures stacked in a vertical direction, and the second stacked structure includes a plurality of second nanostructures stacked in the vertical direction. The semiconductor device structure also includes a first dummy fin structure formed over the isolation structure, and the first dummy fin structure is between the first fin structure and the second fin structure. The semiconductor device structure includes a capping layer formed over the first dummy fin structure, and a top surface of the capping layer is higher than a top surface of the first stacked structure and a top surface of the second stacked structure In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes an isolation structure formed over a substrate, and a first stacked structure, a second stacked structure and a third stacked structure extending above the isolation structure. Each of the first stacked structure, the second stacked structure and the third stacked structure includes a plurality of nanostructures stacked in a vertical direction. The semiconductor device structure includes a first dummy fin structure formed over the isolation structure, and the dummy fin structure is between the first stacked structure and the second stacked structure. The semiconductor device structure also includes a second dummy fin structure formed between the second stacked structure and the third stacked structure, and the second dummy fin structure has a U-shaped structure.

In some embodiments, a method semiconductor device structure is provided. The method includes forming a first stacked structure and a second stacked structure extending above an isolation structure, and each of the first stacked structure and the second stacked structure comprises a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked in a vertical direction. The method also includes forming a first dummy fin structure and a second dummy fin structure over the isolation structure, and the first dummy fin structure is between the first fin structure and the second fin structure, the second fin structure is between the first dummy fin structure and the second dummy fin structure, and the second dummy fin structure has a U-shaped structure. The method further includes forming a first capping layer over the first dummy fin structure, and forming a second capping layer over the second dummy fin structure. A width of the first capping layer is smaller than a width of the second capping layer.

In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes an isolation structure formed over a substrate, and a first stacked structure and a second stacked structure extending above the isolation structure. The first stacked structure includes a plurality of first nanostructures stacked in a vertical direction, and the second stacked structure includes a plurality of second nanostructures stacked in the vertical direction. The semiconductor device structure includes a first dummy fin structure formed over the isolation structure, and the first dummy fin structure is between the first stacked structure and the second stacked structure. The semiconductor device structure also includes a first capping layer formed over the first dummy fin structure, and an interface between the first dummy fin structure and the first capping layer is lower than a top surface of a topmost first nanostructure.

In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes an isolation structure formed over a substrate, and a first stacked structure, a second stacked structure extending above the isolation structure. Each of the first stacked structure and the second stacked structure includes a plurality of nanostructures stacked in a vertical direction. The semiconductor device structure includes a first S/D structure formed adjacent to the first stacked structure, and a second S/D structure formed adjacent to the second stacked structure. The semiconductor device structure includes a first dummy fin structure formed over the isolation structure, and the first dummy fin structure is between the first S/D structure and the second S/D structure. A top surface of the first S/D structure is higher than a top surface of the first dummy layer.

In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes an isolation structure formed over a substrate, and a first stacked structure extending above the isolation structure. The first stacked structure includes a plurality of first nanostructures stacked in a vertical direction. The semiconductor device structure includes a second stacked structure, and the second stacked structure includes a plurality of second nanostructures stacked in the vertical direction. The semiconductor device structure includes a third stacked structure extending above the isolation structure, and the third stacked structure includes a plurality of third nanostructures stacked in a vertical direction. The semiconductor device structure includes a first dummy fin structure between the first stacked structure and the second stacked structure, and a second dummy fin structure between the second stacked structure and the third stacked structure. The semiconductor device structure includes a first gate structure formed over the first stacked structure, and a second gate structure extending from the second stacked structure, the second dummy fin structure to the third stacked structure. The semiconductor device structure includes a first capping layer formed over the first dummy fin structure, and the first gate structure is isolated from the second gate structure by the first capping layer.

In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes first nanostructures and second nanostructures stacked in a vertical direction over a substrate, and a first dummy fin structure between the first nanostructures and the second nanostructures. The semiconductor device structure includes a first gate structure formed over the first nanostructures, wherein the first gate structure comprises a gate dielectric layer, and the gate dielectric layer is in direct contact with a sidewall surface of the first dummy fin structure.

In some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes an isolation structure formed over a substrate, and a first stacked structure, a second stacked structure extending above the isolation structure, and each of the first stacked structure and the second stacked structure includes a plurality of nanostructures stacked in a vertical direction. The semiconductor device structure includes a first S/D structure formed adjacent to the first stacked structure, and a second S/D structure formed adjacent to the second stacked structure. The semiconductor device structure include a first dummy fin structure formed over the isolation structure, and the first dummy fin structure is between the first S/D structure and the second S/D structure. The width of the first dummy fin structure is greater than a width of the first S/D structure.

In some embodiments, a method for forming a semiconductor device structure is provided. The method includes forming a first fin structure and a second fin structure extending above an isolation structure, and each of the first fin structure and the second fin structure includes a plurality of first semiconductor layers and a plurality of second semiconductor layers. The method includes forming a first dummy fin structure over the isolation structure, and the first dummy fin structure is between the first fin structure and the second fin structure, and the first dummy fin has a width is smaller than a width of the isolation structure. The method also includes forming a capping layer over the first dummy fin structure, and forming an etching stop layer over the first dummy fin structure, the first fin structure and the second fin structure. The method includes forming a dummy gate structure over the etching stop layer, and a bottom surface of the first dummy gate structure is higher than a top surface of the capping layer. The method includes removing the first semiconductor layers to form a gap between two adjacent second semiconductor layers, and forming a gate structure in the gap, wherein a top surface of the capping layer is higher than a top surface of the gate structure.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A semiconductor device structure, comprising: first nanostructures and second nanostructures stacked in a vertical direction over a substrate; a first dummy fin structure between the first nanostructures and the second nanostructures; and a first gate structure formed over the first nanostructures, wherein the first gate structure comprises a gate dielectric layer, and the gate dielectric layer is in direct contact with a sidewall surface of the first dummy fin structure.
 2. The semiconductor device structure as claimed in claim 1, further comprising: a first capping layer formed over the first dummy fin structure, wherein the gate dielectric layer is in direct contact with a sidewall surface of the first capping layer.
 3. The semiconductor device structure as claimed in claim 2, further comprising: a conductive layer formed over the first gate structure, wherein a top surface of the conductive layer is lower than a top surface of the first capping layer.
 4. The semiconductor device structure as claimed in claim 1, wherein a topmost surface of the gate dielectric layer is higher than a top surface of the first dummy fin structure.
 5. The semiconductor device structure as claimed in claim 1, wherein a width of the first dummy fin structure is in a range from about 5 nm to about 20 nm.
 6. The semiconductor device structure as claimed in claim 1, further comprising: an isolation structure formed over the substrate and below the first dummy fin structure, wherein a ratio of a width of the first dummy fin structure to a width of the isolation structure is in a range from about 0.1 to about 0.9.
 7. The semiconductor device structure as claimed in claim 1, further comprising: a second dummy fin structure formed over the second nanostructures; and a second gate structure formed over the second nanostructures, wherein the second gate structure is formed on and in direct contact with a top surface of the second dummy fin structure.
 8. The semiconductor device structure as claimed in claim 7, wherein a width of the second dummy fin structure is greater than a width of the first dummy fin structure.
 9. The semiconductor device structure as claimed in claim 7, further comprising: a first isolation structure formed below the first dummy fin structure; and a second isolation structure formed below the second dummy fin structure, wherein a width of the second isolation structure is greater than a width of the first isolation structure.
 10. A semiconductor device structure, comprising: an isolation structure formed over a substrate; a first stacked structure, a second stacked structure extending above the isolation structure, wherein each of the first stacked structure and the second stacked structure comprises a plurality of nanostructures stacked in a vertical direction; a first S/D structure formed adjacent to the first stacked structure; a second S/D structure formed adjacent to the second stacked structure; and a first dummy fin structure formed over the isolation structure, wherein the first dummy fin structure is between the first S/D structure and the second S/D structure, wherein a width of the first dummy fin structure is greater than a width of the first S/D structure.
 11. The semiconductor device structure as claimed in claim 10, further comprising: a first gate structure formed over the first stacked structure; a second gate structure formed over the first stacked structure; a first gate spacer layer adjacent to the first gate structure; and a second gate spacer layer adjacent to the second gate structure, wherein a distance between the first spacer layer and the second gate spacer layer is in a range from about 5 nm to about 120 nm.
 12. The semiconductor device structure as claimed in claim 11, further comprising: a hard mask layer formed over the first stacked structure, wherein the hard mask layer is directly below the first gate spacer layer, and the first S/D structure is in direct contact with the hard mask layer.
 13. The semiconductor device structure as claimed in claim 10, wherein the first dummy fin structure has a U-shaped structure, a filling layer is in a middle portion of the U-shaped structure, and the filling layer has a width in a range from about 10 nm to about 90 nm.
 14. The semiconductor device structure as claimed in claim 10, further comprising: a first capping layer formed over the first dummy fin structure, wherein the first capping layer and the first dummy fin structure are made of different materials.
 15. The semiconductor device structure as claimed in claim 14, further comprising: a first inner spacer layer formed on a sidewall surface of the first stacked structure, wherein the first inner spacer layer is in direct contact with the first capping layer.
 16. A method for forming a semiconductor device structure, comprising: forming a first fin structure and a second fin structure extending above an isolation structure, wherein each of the first fin structure and the second fin structure comprises a plurality of first semiconductor layers and a plurality of second semiconductor layers; forming a first dummy fin structure over the isolation structure, wherein the first dummy fin structure is between the first fin structure and the second fin structure, and the first dummy fin has a width is smaller than a width of the isolation structure; forming a capping layer over the first dummy fin structure; forming an etching stop layer over the first dummy fin structure, the first fin structure and the second fin structure; forming a dummy gate structure over the etching stop layer, wherein a bottom surface of the first dummy gate structure is higher than a top surface of the capping layer; removing the first semiconductor layers to form a gap between two adjacent second semiconductor layers; and forming a gate structure in the gap, wherein a top surface of the capping layer is higher than a top surface of the gate structure.
 17. The method for forming the semiconductor device structure as claimed in claim 16, further comprising: forming a first liner on a sidewall surface of the first fin structure and a sidewall surface of the second fin structure; and forming a second liner over the first liner, wherein the second liner and the first liner are made of different materials.
 18. The method for forming the semiconductor device structure as claimed in claim 16, further comprising: removing a portion of the first semiconductor layers to form a cavity; and forming an inner spacer layer in the cavity, wherein the capping layer is in direct contact with the inner spacer layer.
 19. The method for forming the semiconductor device structure as claimed in claim 16, further comprising: forming a the third fin structure adjacent to the second fin structure; and forming a second dummy fin structure between the second fin structure and the third fin structure, wherein a width of the second dummy fin structure is greater than a width of the first dummy fin structure.
 20. The method for forming the semiconductor device structure as claimed in claim 19, wherein the second dummy fin structure comprises a U-shaped structure. 